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Cryogenic Performance of a Low-Noise JFET-CMOS Preamplifier for HPGe Detectors

MPG-Autoren
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Budjas,  Dusan
Division Prof. Dr. Manfred Lindner, MPI for Nuclear Physics, Max Planck Society;

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Zitation

Budjas, D., Cattadori, C., D'Andragora, A., Pullia, A., Riboldi, S., & Zocca, F. (2010). Cryogenic Performance of a Low-Noise JFET-CMOS Preamplifier for HPGe Detectors. IEEE Transactions on Nuclear Science, 57(2), 737-742. doi:10.1109/TNS.2009.2038697.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0011-71B8-8
Zusammenfassung
Cryogenic low-noise charge sensitive preamplifiers have been developed and realized for the GERmanium Detector Array (GERDA). An integrated JFET-CMOS preamplifier, which is fully functional at cryogenic temperatures, has been tested in conjunction with an unsegmented p-type HPGe detector. Both the crystal and the preamplifier were operated inside a liquid nitrogen dewar at 77 K. The detector capacitance was ~60 pF. An optimum resolution of 1.6 keV FWHM has been obtained for the pulser line at 6 microsecond shaping time. A resolution of 2.1 keV FWHM has been achieved for the 1.332 MeV line from a 60Co source. A wide bandwidth (rise time of ~16 ns) permits use of pulse-shape analysis techniques to localize the position of the photon interactions inside the crystal. A low power consumption (~23 mW) makes the preamplifier suitable for a multi-channel array of germanium detectors.