Metastable-atom-activated growth of an ultra-thin carbonaceous resist for 
reactive ion etching of SiO2 and Si3N4

Thywissen, J.H.; Johnson, K.S.; Dekker, N.H.; Prentiss, M.; Wong, S.S.; Weiss, K.; Grunze, M.

doi:10.1116/1.590026

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Metastable-atom-activated growth of an ultra-thin carbonaceous resist for reactive ion etching of SiO2 and Si3N4

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Grunze, M.
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

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Citation

Thywissen, J., Johnson, K., Dekker, N., Prentiss, M., Wong, S., Weiss, K., et al. (1998). Metastable-atom-activated growth of an ultra-thin carbonaceous resist for reactive ion etching of SiO2 and Si3N4. Journal of Vacuum Science and Technology B, 16(3), 1155-1160. doi:10.1116/1.590026.

Cite as: https://hdl.handle.net/21.11116/0000-0001-B6AD-F

Abstract

A thin carbonaceous resist was grown by exposing a substrate to a beam of neutral metastable argon atoms in the presence of siloxane vapor. X-ray photoelectron spectroscopy and Auger electron spectroscopy data show that the resist was composed primarily of carbon. Near edge x-ray absorption fine structure spectra of samples exposed to metastable atoms show that carbon double bonds were formed during exposure. The deposited material was used as a resist for reactive ion etching into SiO2 and Si3N4. Lines in SiO2 were fabricated with widths as small as 20 nm, aspect ratios >2:1, and sidewalls as steep as 7:1.