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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Burgess,  J. A. J.
Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Max Planck Institute for Solid State Research;
Department of Physics and Astronomy, University of Manitoba;

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Loth,  S.
Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Max Planck Institute for Solid State Research;

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https://dx.doi.org/10.3791/56861
(Publisher version)

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Citation

Rashidi, M., Vine, W., Burgess, J. A. J., Taucer, M., Achal, R., Pitters, J. L., et al. (2018). All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics. Journal of Visualized Experiments, 131: e56861. doi:10.3791/56861.


Cite as: https://hdl.handle.net/21.11116/0000-0001-A752-6
Abstract
The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics.