A "waiting" carbon nitride radical anion: a charge storage material and key 
intermediate in direct C-H thiolation of methylarenes using elemental sulfur as 
the "S"-source

Savateev, Aleksandr; Kurpil, Bogdan; Mishchenko, Artem; Zhang, Guigang; Antonietti, Markus

doi:10.1039/C8SC00745D

Datensatz

DATENSATZ AKTIONENEXPORT

Zur Ablage hinzufügen

Bitte beachten Sie, dass eine neuere Version dieses Datensatzes verfügbar ist:
https://pure.mpg.de/pubman/item/item_2564122_6

DetailsÜbersicht

Freigegeben

Zeitschriftenartikel

A "waiting" carbon nitride radical anion: a charge storage material and key intermediate in direct C-H thiolation of methylarenes using elemental sulfur as the "S"-source

MPG-Autoren

/persons/resource/persons188005

Savateev, Aleksandr
Aleksandr Savateev, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

/persons/resource/persons205240

Kurpil, Bogdan
Aleksandr Savateev, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

/persons/resource/persons205790

Zhang, Guigang
Aleksandr Savateev, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

/persons/resource/persons1057

Antonietti, Markus
Markus Antonietti, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

Externe Ressourcen

Es sind keine externen Ressourcen hinterlegt

Volltexte (beschränkter Zugriff)

Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.

Volltexte (frei zugänglich)

Article.pdf
(Verlagsversion), 2MB

Ergänzendes Material (frei zugänglich)

Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar

Zitation

Savateev, A., Kurpil, B., Mishchenko, A., Zhang, G., & Antonietti, M. (2018). A "waiting" carbon nitride radical anion: a charge storage material and key intermediate in direct C-H thiolation of methylarenes using elemental sulfur as the "S"-source. Chemical Science, 9(14), 3584-3591. doi:10.1039/C8SC00745D.

Zitierlink: https://hdl.handle.net/21.11116/0000-0000-EE47-5

Zusammenfassung

Potassium poly(heptazine imide), a carbon nitride based semiconductor with high structural order and a valence band potential of +2.2 V vs. NHE, in the presence of hole scavengers and under visible light irradiation gives the corresponding polymeric radical anion, in which the specific density of unpaired electrons reaches 112 [small mu ]mol g-1. The obtained polymeric radical anion is stable under anaerobic conditions for several hours. It was characterized using UV-vis absorption, time resolved and steady state photoluminescence spectra. The electronic structure of the polymeric radical anion was confirmed by DFT cluster modelling. The unique properties of potassium poly(heptazine imide) for storing charges were employed in visible light photocatalysis. A series of substituted dibenzyldisulfanes was synthesized in 41-67% yield from the corresponding methylarenes via cleavage of the methyl C-H bond under visible light irradiation and metal-free conditions.