Logarithmic singularities and quantum oscillations in magnetically doped 
topological insulators

Nandi, D.; Sodemann, Inti; Shain, K.; Lee, G. H.; Huang, K. -F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.

doi:10.1103/PhysRevB.97.085151

Item

ITEM ACTIONSEXPORT

Add to Basket

Please note that a newer version of this item is available:
https://pure.mpg.de/pubman/item/item_2561169_3

DetailsSummary

Released

Journal Article

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

MPS-Authors

/persons/resource/persons217476

Sodemann, Inti
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

External Resource

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.085151
(Publisher version)

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Nandi, D., Sodemann, I., Shain, K., Lee, G. H., Huang, K.-.-F., Chang, C.-Z., et al. (2018). Logarithmic singularities and quantum oscillations in magnetically doped topological insulators. Physical Review B, 97(8): 085151. doi:10.1103/PhysRevB.97.085151.

Cite as: https://hdl.handle.net/21.11116/0000-0000-D5A6-4

Abstract

We report magnetotransport measurements on magnetically doped (Bi, Sb)(2)Te-3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.