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Journal Article

Mechanism of layer growth in microwave-PECVD silan plasmas - Experiment and simulation

MPS-Authors

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Mutzke, A.
Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society;

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Schneider, R.
Helmholtz Junior Research Group 'Computational Material Science' (Junior Research Group HFG-Greifswald), Max Planck Institute for Plasma Physics, Max Planck Society;
Tokamak Theory (TOK), Max Planck Institute for Plasma Physics, Max Planck Society;
Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society;
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Stroth, U.
Experimental Plasma Physics 3 (E3), Max Planck Institute for Plasma Physics, Max Planck Society;
Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society;

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Citation

Häberle, E., Mutzke, A., Schneider, R., & Stroth, U. (n.d.). Mechanism of layer growth in microwave-PECVD silan plasmas - Experiment and simulation. Nuclear Instruments and Methods in Physics B.

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