Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Pressure-induced metallization in layered ReSe2

MPG-Autoren
/persons/resource/persons129064

Naumov,  P. G.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons209325

ElGhazali,  M. A.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons188057

Mirhosseini,  H.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons192597

Süß,  V.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126601

Felser,  C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126748

Medvedev,  S. A.
Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

Externe Ressourcen
Es sind keine externen Ressourcen hinterlegt
Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte in PuRe verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Naumov, P. G., ElGhazali, M. A., Mirhosseini, H., Süß, V., Morosan, E., Felser, C., et al. (2018). Pressure-induced metallization in layered ReSe2. Journal of Physics: Condensed Matter, 30(3): 035401, pp. 1-6. doi:10.1088/1361-648X/aa9f52.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-002E-9F30-8
Zusammenfassung
The evolution of the crystal structure and electrical transport properties of distorted layered transition metal dichalcogenide ReSe2 was studied under high pressure up to similar to 90 GPa by Raman spectroscopy and electrical resistivity measurements accompanied by ab initio electronic band structure calculations. Raman spectroscopy studies indicate an isostructural phase transition due to layer sliding at similar to 7 GPa, to the distorted 1T-phase which remains stable up to the highest pressures employed in these experiments. From a direct band gap semiconductor at ambient pressure, ReSe2 undergoes pressure-induced metallization at pressures similar to 35 GPa, in agreement with the ab initio calculations. Resistivity measurements performed with different loading conditions reveal the possible emergence of superconductivity, which is most likely not an intrinsic property of ReSe2, but is rather conditioned by internal stresses upon compression.