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Journal Article

LOW temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

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Rechmann,  Julian
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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O’Donoghue, R., Rechmann, J., Aghaee, M., Rogalla, D., Becker, H.-W., Creatore, M., et al. (2017). LOW temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition. Dalton Transactions, 46, 16551-16561. doi:10.1039/c7dt03427j.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-5426-0
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