Improved thermoelectric properties of TiNiSn through enhancing strain field 
fluctuation

Lkhagvasuren, Enkhtaivan; Fu, Chenguang; Fecher, Gerhard H.; Auffermann, Gudrun; Kreiner, Guido; Schnelle, Walter; Felser, Claudia

doi:10.1088/1361-6463/aa85bb

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Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation

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Lkhagvasuren, Enkhtaivan
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fu, Chenguang
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher, Gerhard H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Auffermann, Gudrun
Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Kreiner, Guido
Guido Kreiner, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Schnelle, Walter
Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Lkhagvasuren, E., Fu, C., Fecher, G. H., Auffermann, G., Kreiner, G., Schnelle, W., et al. (2017). Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation. Journal of Physics D: Applied Physics, 50(42): 425502, pp. 1-6. doi:10.1088/1361-6463/aa85bb.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-06FF-C

Abstract

MNiSn (M = Hf, Zr, Ti) -based half Heusler compounds have attracted extensive attention as promising materials in thermoelectric power generation. In this work, the thermoelectric properties of the cheapest composition TiNiSn from this system are investigated. Isoelectronic substitutions of Si and Ge on Sn site are employed to reduce the lattice thermal conductivity. It is found that Si substitution leads to simultaneously enhanced mass and strain field fluctuations in TiNiSn, while the strain field fluctuation dominates the decrease of thermal conductivity in Ge substituted TiNiSn. A maximum ZT of 0.48 at 740 K is obtained in TiNiSn0.975Ge0.025, which is a 23% increase compared to TiNiSn. This result highlights the role of strain field fluctuation in suppressing lattice thermal conductivity and improving the thermoelectric performance of half-Heusler compounds.