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Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT

MPS-Authors
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Liebscher,  Christian
Advanced Transmission Electron Microscopy, Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Gault,  Baptiste
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Scheu,  Christina Ulrike
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Dehm,  Gerhard
Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Raabe,  Dierk
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Liebscher, C., Stoffers, A., Cojocaru-Mirédin, O., Gault, B., Scheu, C. U., Dehm, G., et al. (2016). Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT. In Microscopy and Microanalysis (pp. 46-47).


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-AA71-0
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