Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission 
Electron Microscopy: Example of Segregation at Silicon Grain Boundaries

Stoffers, Andreas; Barthel, Juri; Liebscher, Christian; Gault, Baptiste; Cojocaru-Mirédin, Oana; Scheu, Christina; Raabe, Dierk

doi:10.1017/S1431927617000034

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Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries

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Stoffers, Andreas
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
I. Physikalisches Institut (IA), RWTH Aachen, 52074 Aachen, Germany;

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Liebscher, Christian
Advanced Transmission Electron Microscopy, Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Gault, Baptiste
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Cojocaru-Mirédin, Oana
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
I. Physikalisches Institut (IA), RWTH Aachen, 52074 Aachen, Germany;

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Scheu, Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Raabe, Dierk
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Stoffers, A., Barthel, J., Liebscher, C., Gault, B., Cojocaru-Mirédin, O., Scheu, C., et al. (2017). Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries. Microscopy and Microanalysis, 23(2), 291-299. doi:10.1017/S1431927617000034.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-A6A6-B

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