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Conference Paper

Characterization and optimization of a thin direct electron detector for fast imaging applications

MPS-Authors
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Dourki,  Ibrahym
International Max Planck Research School for Ultrafast Imaging & Structural Dynamics (IMPRS-UFAST), Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany;

External Resource

https://doi.org/10.1088/1748-0221/12/03/C03047
(Publisher version)

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Fulltext (public)

Dourki_2017_J._Inst._12_C03047.pdf
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Citation

Dourki, I., Westermeier, F., Schopper, F., Richter, R., Andricek, L., Ninkovic, J., et al. (2017). Characterization and optimization of a thin direct electron detector for fast imaging applications. In Journal of Instrumentation. doi:10.1088/1748-0221/12/03/C03047.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-93D2-B
Abstract
Direct electron detectors are increasingly used to explore the dynamics of macromolecules in real space and real time using transmission electron microscopy. The purpose of this work is to optimize the most suitable detector configuration of a thin silicon detector by Monte Carlo Simulations. Several simulations were performed to achieve an advanced detector geometry that reduces significantly the background signal due to backscattered electrons resulting in an enhanced imaging performance of the detector. Utilizing DEPFET (DEpleted P-channel Field Effect Transistor) technology and the novel ideas for the optimized detector geometry, a unique direct hit electron detector is currently being produced.