Quantum tunnelling and charge accumulation in organic ferroelectric memory 
diodes

Ghittorelli, M.; Lenz, Thomas; Sharifi Dehsari, Hamed; Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Kovacs-Vajna, Z. M.; de Leeuw, Dago M.; Torricelli, F.

doi:10.1038/ncomms15841

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Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

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Lenz, Thomas
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Sharifi Dehsari, Hamed
Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society;

/persons/resource/persons131121

Zhao, Dong
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

/persons/resource/persons103158

Asadi, Kamal
Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society;

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Blom, Paul W. M.
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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de Leeuw, Dago M.
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Ghittorelli, M., Lenz, T., Sharifi Dehsari, H., Zhao, D., Asadi, K., Blom, P. W. M., Kovacs-Vajna, Z. M., de Leeuw, D. M., & Torricelli, F. (2017). Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes. Nature Communications, 8:. doi:10.1038/ncomms15841.

引用: https://hdl.handle.net/11858/00-001M-0000-002D-7F85-4

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