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Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride

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Kumar,  Nitesh
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Shekhar,  Chandra
Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Borrmann,  Horst
Horst Borrmann, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Kumar, N., Shekhar, C., Wang, M., Chen, Y., Borrmann, H., & Felser, C. (2017). Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride. Physical Review B, 95(15): 155128, pp. 1-7. doi:10.1103/PhysRevB.95.155128.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-4997-9
Abstract
The prediction of the quantum spin Hall effect in two-dimensional ZrTe5 and HfTe5 monolayers has generated considerable recent interest in these materials. In addition, Dirac points and chiral-anomaly-induced negative longitudinal magnetoresistance (MR) have been observed in ZrTe5. Herein, we study the transport behavior of HfTe5 single crystals in detail and find a large (0.9 x 10(4)%) out-of-plane transverse MR, which is among the highest for layered materials reported thus far. We also encounter a large linear in-plane transverse (magnetic field parallel to c, current parallel to a) MR and discuss its possible origin. The mass anisotropy (gamma = 5.4 at 125 K) obtained by scaling angle-dependent MR data is consistent with the HfTe5 elliptical Fermi surface.