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Journal Article

Control of unintentional oxygen incorporation in GaN

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Wirth,  Steffen
Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Schmult, S., Schubert, F., Wirth, S., Grosser, A., Mittmann, T., & Mikolajick, T. (2017). Control of unintentional oxygen incorporation in GaN. Journal of Vacuum Science and Technology B, 35(2): 02B104, pp. 1-5. doi:10.1116/1.4975925.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-2217-0
Abstract
The impact of growth temperature on the unintentional oxygen incorporation in GaN and AlGaN grown by molecular beam epitaxy and the consequences for electrical and optical properties are investigated. In particular, transistor switching characteristics, magneto-transport traces, and photoluminescence spectra of samples grown around 600 and 665 degrees C are compared. It is found that the incorporation of unintentional oxygen in GaN and Al0.1Ga0.9N is reduced by 1 order of magnitude upon increasing the growth temperature by similar to 60 degrees C. A growth temperature of 665 degrees C results in an oxygen background concentration of 1 x 10(17) cm(-3) and simultaneously in electrically insulating GaN material. (C) 2017 American Vacuum Society.