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Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

MPG-Autoren
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Kumar,  Nitesh
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Shekhar,  Chandra
Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Zitation

Sankar, R., Rao, G. N., Muthuselvam, I. P., Butler, C., Kumar, N., Murugan, G. S., et al. (2017). Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal. Chemistry of Materials, 29(2), 699-707. doi:10.1021/acs.chemmater.6b04363.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-002C-A6A2-3
Zusammenfassung
Large size (similar to 2 cm) single crystals of layered MoTe2 in both 2H- and 1T'-types were synthsized using TeBr4 as the source of Br-2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (rho) measurements. The resistivity rho(T), magnetic susceptibility chi(T), and heat capacity C-p(T) measurement results reveal a first order structural phase transition near similar to 240 K for 1T'-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.