Datensatz

Zusammenfassung

Single-ion magnets (SIMs) that can maintain magnetization direction on an individual transition metal atom represent the smallest atomic-scale units for future magnetic data storage devices and molecular electronics. Here we present a robust extended inorganic solid hosting efficient SIM centers, as an alternative to molecular SIM crystals. We show that unique dioxocobaltate(II) ions, confined in the channels of strontium hydroxyapatite, exhibit classical SIM features with a large energy barrier for magnetization reversal (Ueff) of 51–59 cm–1. The samples have been tuned such that a magnetization hysteresis opens below 8 K and Ueff increases by a factor of 4 and can be further enhanced to the highest values among 3d metal complexes of 275 cm–1 when Ba is substituted for Sr. The SIM properties are preserved without any tendency toward spin ordering up to a high Co concentration. At a maximal Co content, a hypothetical regular hexagonal grid of SIMs with a 1 nm interspacing on the (001) crystal facet would allow a maximal magnetic recording density of 105 Gb/cm2.