Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well 
based structures on low-temperature grown GaAs(001)

Arora, Ashish; Ghosh, Sandip; Arora, B. M.; Malzer, Stefan; Doehler, Gottfried

doi:10.1063/1.3479501

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Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

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Malzer, Stefan
Guests, Max Planck Institute for the Science of Light, Max Planck Society;

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Zitation

Arora, A., Ghosh, S., Arora, B. M., Malzer, S., & Doehler, G. (2010). Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001). APPLIED PHYSICS LETTERS, 97(8): 081902. doi:10.1063/1.3479501.

Zitierlink: https://hdl.handle.net/11858/00-001M-0000-002D-6AC5-A

Zusammenfassung

Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/Al(0.3)Ga(0.7)As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mm parallel to y) and narrow width (10 and 20 mu m parallel to x) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization E parallel to x, compared to E parallel to y. The heavy-hole exciton transition shows a weaker polarization anisotropy of opposite sign, being stronger for E parallel to y. Through calculations based on the Bir-Pikus Hamiltonian, the observed in-plane optical polarization anisotropy is shown to arise from valence band mixing induced by anisotropic strain in the plane of quantum wells. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3479501]