Toward Local Growth of Individual Nanowires on Three-Dimensional 
Microstructures by Using a Minimally Invasive Catalyst Templating Method

Jenke, Martin Guenter; Lerose, Damiana; Niederberger, Christoph; Michler, Johann; Christiansen, Silke; Utke, Ivo

doi:10.1021/nl2021448

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Toward Local Growth of Individual Nanowires on Three-Dimensional Microstructures by Using a Minimally Invasive Catalyst Templating Method

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Christiansen, Silke
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Jenke, M. G., Lerose, D., Niederberger, C., Michler, J., Christiansen, S., & Utke, I. (2011). Toward Local Growth of Individual Nanowires on Three-Dimensional Microstructures by Using a Minimally Invasive Catalyst Templating Method. NANO LETTERS, 11(10), 4213-4217. doi:10.1021/nl2021448.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-697D-3

Abstract

We present a novel minimally invasive postprocessing method for catalyst templating based on focused charged particle beam structuring, which enables a localized vapor liquid solid (VLS) growth of individual nanowires on prefabricated three-dimensional micro- and nanostructures. Gas-assisted focused electron beam induced deposition (FEBID) was used to deposit a SiO(x) surface layer of about 10 x 10 mu m(2) on top of a silicon atomic force microscopy cantilever. Gallium focused ion beam (FIB) milling was used to make a hole through the SiO(x) layer into the underlying silicon. The hole was locally filled with a gold catalyst via FEBID using either Me(2)Au(tfac) or Me(2)Au(acac) as precursor. Subsequent chemical vapor deposition (CVD)-induced VLS growth using a mixture of SiH(4) and Ar resulted in individual high quality crystalline nanowires. The process, its yield, and the resulting angular distribution/crystal orientation of the silicon nanowires are discussed. The presented combined FIB/FEBID/CVD-VLS process is currently the only proven method that enables the growth of individual monocrystalline Si nanowires on prestructured substrates and devices.