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Journal Article

Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection

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Doehler,  G. H.
Guests, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Singh, A., Pal, S., Surdi, H., Prabhu, S. S., Mathimalar, S., Nanal, V., et al. (2015). Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection. OPTICS EXPRESS, 23(5), 6656-6661. doi:10.1364/OE.23.006656.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-63F6-1
Abstract
We report here a photoconductive material for THz detection with sub-picosecond carrier lifetime made by C-12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C-12) ions. With an increase of the irradiation dose from similar to 10(12) /cm(2) to similar to 10(15) /cm(2) the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, whereas that of usual non-irradiated SI-GaAs is similar to 70 picosecond. This decreased carrier lifetime has resulted in a strong improvement in THz pulse detection compared with normal SI-GaAs. Improvement in signal to noise ratio as well as in detection bandwidth is observed. Carbon irradiated SI-GaAs appears to be an economical alternative to low temperature grown GaAs for fabrication of THz devices. (C) 2015 Optical Society of America