Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic 
Spintronics

Sahoo, Roshnee; Wollmann, Lukas; Selle, Susanne; Hoeche, Thomas; Ernst, Benedikt; Kalache, Adel; Shekhar, Chandra; Kumar, Nitesh; Chadov, Stanislav; Felser, Claudia; Parkin, Stuart S. P.; Nayak, Ajaya K.

doi:10.1002/adma.201602963

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Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics

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Sahoo, Roshnee
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons138552

Wollmann, Lukas
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons200069

Ernst, Benedikt
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons129679

Kalache, Adel
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126847

Shekhar, Chandra
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons195511

Kumar, Nitesh
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126564

Chadov, Stanislav
Stanislav Chadov, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126601

Felser, Claudia
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126778

Nayak, Ajaya K.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Sahoo, R., Wollmann, L., Selle, S., Hoeche, T., Ernst, B., Kalache, A., et al. (2016). Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics. Advanced Materials, 28(38), 8499-8504. doi:10.1002/adma.201602963.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002B-BCF7-3

Abstract

Fully compensated ferrimagnets with tetragonal crystal structure have the potential for large spin-polarization and strong out-of-plane magnetic anisotropy; hence, they are ideal candidates for high-density-memory applications. Tetragonal Heusler thin films with compensated magnetic state are realized by substitution of Pt in Mn3-xPtxGa. Furthermore, the bilayer formed from compensated/uncompensated Mn-Pt-Ga layers is utilized to accomplish exchange bias up to room temperature.