Retention of intermediate polarization states in ferroelectric materials 
enabling memories for multi-bit data storage

Zhao, Dong; Katsouras, Ilias; Asadi, Kamal; Groen, W. A.; Blom, Paul W. M.; de Leeuw, Dago M.

doi:10.1063/1.4953199

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Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

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Zhao, Dong
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Asadi, Kamal
Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society;

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Blom, Paul W. M.
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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de Leeuw, Dago M.
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Zhao, D., Katsouras, I., Asadi, K., Groen, W. A., Blom, P. W. M., & de Leeuw, D. M. (2016). Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage. Applied Physics Letters, 108(23): 232907. doi:10.1063/1.4953199.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002B-21E6-4

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