Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs 
quantum wells

Hantke, Kristian; Heber, J. D.; Chatterjee, S.; Klar, P. J.; Volz, K.; Stolz, W.; Rühle, W. W.; Polimeni, A.; Capizzi, M.

doi:10.1063/1.2149154

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Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs quantum wells

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Hantke, Kristian
Group Nonlinear laser spectroscopy, Department of Dynamics of Complex Fluids, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society;

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Citation

Hantke, K., Heber, J. D., Chatterjee, S., Klar, P. J., Volz, K., Stolz, W., et al. (2005). Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs quantum wells. Applied Physics Letters, 87(25): 252111. doi:10.1063/1.2149154.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-B567-8

Abstract

We measured time-resolved photoluminescence on as-grown, annealed, as well as annealed and hydrogenated (Ga0.7In0.3)(N0.006As0.994)∕GaAs quantum-well structures. The postgrowth treatment changes not only the photoluminescence decay time but also the intensity of photoluminescence directly after excitation. This initial luminescence intensity is determined by a competition between relaxation of electrons into nitrogen related potential fluctuations in the conduction band and their capture by deep traps. In contrast, the decay of the photoluminescence is mainly determined by the competition between radiative and nonradiative recombination, which are both influenced by localization. Annealing decreases localization effects and nonradiative recombination. Hydrogenation also reduces localization effects but increases nonradiative recombination.