Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

MPG-Autoren
/persons/resource/persons121564

Lei,  W. W.
Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;
Institute for Frontier Materials, Deakin University;

/persons/resource/persons22243

Willinger,  Marc Georg
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons1057

Antonietti,  Markus
Markus Antonietti, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

/persons/resource/persons41519

Giordano,  Cristina
Cristina Giordano, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society;
School of Biological and Chemical Sciences, Queen Mary University of London;

Externe Ressourcen
Es sind keine externen Ressourcen hinterlegt
Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte in PuRe verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Lei, W. W., Willinger, M. G., Antonietti, M., & Giordano, C. (2015). GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization. Chemistry – A European Journal, 21(52), 18976-18982. doi:10.1002/chem.201502875.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0029-7FBB-9
Zusammenfassung
Semiconducting GaN and GaxIn1−xN nanoparticles (4–10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea-glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as-prepared samples. X-ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices.