Titanium nitride as a seed layer for Heusler compounds

Niesen, Alessia; Glas, Manuel; Ludwig, Jana; Schmalhorst, Jan-Michael; Sahoo, Roshnee; Ebke, Daniel; Arenholz, Elke; Reiss, Guenter

doi:10.1063/1.4938388

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Titanium nitride as a seed layer for Heusler compounds

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Sahoo, Roshnee
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ebke, Daniel
Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Niesen, A., Glas, M., Ludwig, J., Schmalhorst, J.-M., Sahoo, R., Ebke, D., et al. (2015). Titanium nitride as a seed layer for Heusler compounds. Journal of Applied Physics, 118(24): 243904, pp. 1-7. doi:10.1063/1.4938388.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-78A7-2

Abstract

Titanium nitride (TiN) shows low resistivity at room temperature (27 mu Omega cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer. (C) 2015 AIP Publishing LLC.