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Ultrasonic approach for surface nanostructuring

MPG-Autoren
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Skorb,  Ekaterina. V.
Biomaterialien, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

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Möhwald,  Helmuth
Helmuth Möhwald, Grenzflächen, Max Planck Institute of Colloids and Interfaces, Max Planck Society;

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Zitation

Skorb, E. V., & Möhwald, H. (2016). Ultrasonic approach for surface nanostructuring. Ultrasonics Sonochemistry, 29, 589-603. doi:10.1016/j.ultsonch.2015.09.003.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0028-79F4-0
Zusammenfassung
The review is about solid surface modifications by cavitation induced in strong ultrasonic fields. The topic is worth to be discussed in a special issue of surface cleaning by cavitation induced processes since it is important question if we always find surface cleaning when surface modifications occur, or vice versa. While these aspects are extremely interesting it is important for applications to follow possible pathways during ultrasonic treatment of the surface: i) solely cleaning; ii) cleaning with following surface nanostructuring; and iii) topic of this particular review, surface modification with controllably changing its characteristics for advanced applications. It is important to know what can happen and which parameters should be taking into account in the case of surface modification when actually the aim is solely cleaning or aim is surface nanostructuring. Nanostructuring should be taking into account since is often accidentally applied in cleaning. Surface hydrophilicity, stability to Red / Ox reactions, adhesion of surface layers to substrate, stiffness and melting temperature are important to predict the ultrasonic influence on a surface and discussed from these points for various materials and intermetallics, silicon, hybrid materials. Important solid surface characteristics which determine resistivity and kinetics of surface response to ultrasonic treatment are discussed. It is also discussed treatment in different solvents and presents in solution of metal ions.