Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2

Narayanan, A.; Watson, M. D.; Blake, S. F.; Bruyant, N.; Drigo, L.; Chen, Y. L.; Prabhakaran, D.; Yan, B.; Felser, C.; Kong, T.; Canfield, P. C.; Coldea, A. I.

doi:10.1103/PhysRevLett.114.117201

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Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd₃As₂

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Yan, B.
Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Narayanan, A., Watson, M. D., Blake, S. F., Bruyant, N., Drigo, L., Chen, Y. L., et al. (2015). Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd₃As₂. Physical Review Letters, 114(11): 117201, pp. 1-5. doi:10.1103/PhysRevLett.114.117201.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0026-BE15-F

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