A scheme for spin-selective electron localization in Mn3Ga Heusler material

Wollmann, Lukas; Fecher, Gerhard H.; Chadov, Stanislav; Felser, Claudia

doi:10.1088/0022-3727/48/16/164004

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A scheme for spin-selective electron localization in Mn₃Ga Heusler material

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Wollmann, Lukas
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher, Gerhard H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chadov, Stanislav
Stanislav Chadov, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Wollmann, L., Fecher, G. H., Chadov, S., & Felser, C. (2015). A scheme for spin-selective electron localization in Mn₃Ga Heusler material. Journal of Physics D: Applied Physics, 48(16): 164004, pp. 1-6. doi:10.1088/0022-3727/48/16/164004.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0026-B62E-6

Abstract

We demonstrate that tetragonal Mn 3 Ga Heusler material allows for a new possibility of adjusting an electric current by means of the so-called spin-selective localization of conduction electrons. On the basis of a first-principles analysis, we propose possible chemical substitutes for Mn, which, when used in small quantities, can lead to a disorder-induced localization of the conduction electrons in a single spin channel. Replacement of the Mn in Mn3 − x Y x Ga with other 3 d transition metals Y is known not to change the tetragonal structure for a certain range of x . For Y = Co the range is x ⩽ 0.5. Therefore, substitution of Co for Mn is used in the present work as a prototype procedure for a detailed demonstration of the underlying physical mechanisms.