Effect of ion beam assisted deposition on the growth of indium tin oxide (ITO) 
nanowires.

Yu, H. K.; Lee, J. L.

doi:10.1039/C4CE00237G

アイテム詳細

登録内容を編集ファイル形式で保存

一時保存へ追加

このアイテムの新しいバージョンが利用可能です:
https://pure.mpg.de/pubman/item/item_2033609_5

詳細要約

公開

学術論文

Effect of ion beam assisted deposition on the growth of indium tin oxide (ITO) nanowires.

MPS-Authors

/persons/resource/persons131049

Yu, H. K.
Department of Dynamics at Surfaces, MPI for Biophysical Chemistry, Max Planck Society;

External Resource

http://pubs.rsc.org/en/content/articlepdf/2014/ce/c4ce00237g
(出版社版)

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

フルテキスト (公開)

2033609.pdf
(出版社版), 3MB

付随資料 (公開)

There is no public supplementary material available

引用

Yu, H. K., & Lee, J. L. (2014). Effect of ion beam assisted deposition on the growth of indium tin oxide (ITO) nanowires. CrystEngComm, 16(20), 4108-4112. doi:10.1039/C4CE00237G.

引用: https://hdl.handle.net/11858/00-001M-0000-0019-BE50-1

要旨

We developed a method to control the alignment and density of indium tin oxide (ITO) nanowires by using ion beam assisted deposition (IBAD). During electron beam evaporation, IBAD changed the randomly oriented branch type nanowires to aligned nanowires without branches. This is due to the energetic ion beams which play a role in nucleating tin containing indium nanodots at the initial stage of growth. The improved alignment of the ITO nanowires reduced the sensing time for ethanol gas.