Effect of charge on the movement of dislocations in SiC

Eberlein, T. A. G.; Jones, R.; Blumenau, A. T.; Öberg, S.; Briddon, P. R.

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Effect of charge on the movement of dislocations in SiC

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Blumenau, A. T.
Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Eberlein, T. A. G., Jones, R., Blumenau, A. T., Öberg, S., & Briddon, P. R. (2006). Effect of charge on the movement of dislocations in SiC. Applied Physics Letters, 88(8): 082113, pp. 082113-082113.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-5BA0-F

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