Dangling-bond defect in a-Si:H: Characterization of network and strain effects 
by first-principles calculation of the EPR parameters

Pfanner, Gernot; Freysoldt, Christoph; Neugebauer, Jörg; Inam, Fakhar; Drabold, D. A.; Jarolimek, Karol; Zeman, M.

doi:10.1103/PhysRevB.87.125308

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Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters

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Pfanner, Gernot
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt, Christoph
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Pfanner, G., Freysoldt, C., Neugebauer, J., Inam, F., Drabold, D. A., Jarolimek, K., et al. (2013). Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters. Physical Review B, 87(12): 125308, pp. 1-7. doi:10.1103/PhysRevB.87.125308.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-2602-0

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