Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films

MPG-Autoren
/persons/resource/persons126949

Köhler,  A.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126591

Ebke,  D.
Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126601

Felser,  C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

Externe Ressourcen
Es sind keine externen Ressourcen hinterlegt
Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte in PuRe verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Köhler, A., Knez, I., Ebke, D., Felser, C., & Parkin, S. S. P. (2013). Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films. Applied Physics Letters, 103(16): 162406, pp. 1-4. doi:10.1063/1.4825278.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0015-1A90-5
Zusammenfassung
We have investigated the magnetization and loss of anisotropy in ultrathin strained and unstrained Mn-Ga films at room temperature. Two Mn-Ga compositions, one of which is doped with Co, were grown on Cr buffered MgO (001) substrates. Films with a thickness below 10 nm are highly strained and the ratio c/a vs. thickness is depending on composition. The perpendicular magnetic anisotropy is shown to be drastically reduced with decreasing thickness and increasing strain. These findings should be considered when generalizing and downscaling results obtained from films > 20 nm. The strain can effectively be reduced by introducing an additional Pt buffer and thus maintaining a high perpendicular magnetic anisotropy for a thickness as low as 6 nm. (C) 2013 AIP Publishing LLC.