X-ray absorption spectroscopy and magnetic circular dichroism studies of L10
-Mn-Ga thin films

Glas, M.; Sterwerf, C.; Schmalhorst, J. M.; Ebke, D.; Jenkins, C.; Arenholz, E.; Reiss, G.

doi:10.1063/1.4827377

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X-ray absorption spectroscopy and magnetic circular dichroism studies of L1₀-Mn-Ga thin films

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Ebke, D.
Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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引用

Glas, M., Sterwerf, C., Schmalhorst, J. M., Ebke, D., Jenkins, C., Arenholz, E., & Reiss, G. (2013). X-ray absorption spectroscopy and magnetic circular dichroism studies of L1₀-Mn-Ga thin films. Journal of Applied Physics, 114(18):, pp. 183910-1-183910-5. doi:10.1063/1.4827377.

引用: https://hdl.handle.net/11858/00-001M-0000-0015-1A89-8

要旨

Tetragonally distorted Mn3-xGax thin films with 0.1 < x < 2 show a strong perpendicular magnetic anisotropy and low magnetization and thus have the potential to serve as electrodes in spin transfer torque magnetic random access memory. Because a direct capping of these films with MgO is problematic due to oxide formation, we examined the influence of a CoFeB interlayer and of two different deposition methods for the MgO barrier on the formation of interfacial Mn-O for Mn62Ga38 by element specific X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD). A highly textured L1(0) crystal structure of the Mn-Ga films was verified by X-ray diffraction measurements. For samples with e-beam evaporated MgO barrier no evidence for Mn-O was found whereas in samples with magnetron sputtered MgO, Mn-O was detected, even for the thickest interlayer thickness. Both XAS and XMCD measurements showed an increasing interfacial Mn-O amount with decreasing CoFeB interlayer thickness. Additional element specific full hysteresis loops determined an out-of-plane magnetization axis for the Mn and Co, respectively. (C) 2013 AIP Publishing LLC.