Direct observation of band bending in the topological insulator Bi2Se3

ViolBarbosa, C. E.; Shekhar, C.; Yan, B.; Ouardi, S.; Ikenaga, E.; Fecher, G. H.; Felser, C.

doi:10.1103/PhysRevB.88.195128

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Direct observation of band bending in the topological insulator Bi₂Se₃

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ViolBarbosa, C. E.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Shekhar, C.
Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Yan, B.
Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ouardi, S.
Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher, G. H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

ViolBarbosa, C. E., Shekhar, C., Yan, B., Ouardi, S., Ikenaga, E., Fecher, G. H., et al. (2013). Direct observation of band bending in the topological insulator Bi₂Se₃. Physical Review B, 88(19): 195128, pp. 195128-1-195128-4. doi:10.1103/PhysRevB.88.195128.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-1E1E-D

Abstract

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23-0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.