Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth 
from Solid Sources

Weatherup, Robert S.; Baehtz, Carsten; Dlubak, Bruno; Bayer, Bernhard C.; Kidambi, Piran R.; Blume, Raoul; Schlögl, Robert; Hofmann, Stephan

doi:10.1021/nl401601x

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Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources

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Schlögl, Robert
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Weatherup, R. S., Baehtz, C., Dlubak, B., Bayer, B. C., Kidambi, P. R., Blume, R., et al. (2013). Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources. Nano Letters, 13(10), 4624-4631. doi:10.1021/nl401601x.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0014-64E7-E

Abstract

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al₂O₃ barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.