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Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: a study by high-resolution Rutherford backscattering

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Dash,  S. P.
Dept. Modern Magnetic Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Goll,  D.
Dept. Modern Magnetic Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;
Former Minerva Research Group Magnetic Nanostructures, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Carstanjen,  H. D.
Former Central Scientific Facility Pelletron Accelerator, Max Planck Institute for Intelligent Systems, Max Planck Society;
Dept. Modern Magnetic Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Dash, S. P., Goll, D., & Carstanjen, H. D. (2007). Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: a study by high-resolution Rutherford backscattering. Applied Physics Letters, 90: 132109. doi:10.1063/1.2717525.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-4365-7
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