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Ordered structure of FeGe2 formed during solid-phase epitaxy

MPG-Autoren
http://pubman.mpdl.mpg.de/cone/persons/resource/persons49292

Willinger,  Elena
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons39194

Huang,  Xing
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Volltexte (frei zugänglich)

PhysRevMaterials.2.051402.pdf
(Verlagsversion), 894KB

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Zitation

Jenichen, B., Hanke, M., Gaucher, S., Trampert, A., Herfort, J., Kirmse, H., et al. (2018). Ordered structure of FeGe2 formed during solid-phase epitaxy. Physical Review Materials, 2(5): 051402(R). doi:10.1103/PhysRevMaterials.2.051402.


Zitierlink: http://hdl.handle.net/21.11116/0000-0001-9DC2-3
Zusammenfassung
Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.