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Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons136321

Hieke,  Stefan Werner
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75388

Dehm,  Gerhard
Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76047

Scheu,  Christina Ulrike
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Materials Analytics, RWTH Aachen University, Kopernikusstrasse 10, Aachen, Germany;

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Citation

Hieke, S. W., Dehm, G., & Scheu, C. U. (2017). Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3). Acta Materialia, 140, 355-365. doi:10.1016/j.actamat.2017.08.050.


Cite as: http://hdl.handle.net/21.11116/0000-0000-7341-5
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