Creating femtosecond-laser-hyperdoped silicon with a homogeneous doping profile

Lin, Y. T.; Mangan, N.; Marbach, S.; Schneider, Tobias; Deng, G.; Zhou, S.

doi:10.1063/1.4907988

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Creating femtosecond-laser-hyperdoped silicon with a homogeneous doping profile

MPS-Authors

/persons/resource/persons173645

Schneider, Tobias
Max Planck Research Group Emerging Complexity in Physical Systems, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society;

External Resource

http://scitation.aip.org/content/aip/journal/apl/106/6/10.1063/1.4907988
(Publisher version)

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Lin, Y. T., Mangan, N., Marbach, S., Schneider, T., Deng, G., & Zhou, S. (2015). Creating femtosecond-laser-hyperdoped silicon with a homogeneous doping profile. Applied Physics Letters, 106(6): 062105. doi:10.1063/1.4907988.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002A-3975-C

Abstract

Femtosecond-laser hyperdoping of sulfur in silicon typically produces a concentration gradient that results in undesirable inhomogeneous material properties. Using a mathematical model of the doping process, we design a fabrication method consisting of a sequence of laser pulses with varying sulfur concentrations in the atmosphere, which produces hyperdoped silicon with a uniform concentration depth profile. Our measurements of the evolution of the concentration profiles with each laser pulse are consistent with our mathematical model of the doping mechanism, based on classical heat and solute diffusion coupled to the far-from-equilibrium dopant incorporation. The use of optimization methods opens an avenue for creating controllable hyperdoped materials on demand.