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Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons21589

Härtelt,  Marko
Molecular Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons21548

Gewinner,  Sandy
Molecular Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons22079

Schöllkopf,  Wieland
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Si6Brevised.pdf
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Citation

Truong, N. X., Härtelt, M., Jaeger, B. K. A., Gewinner, S., Schöllkopf, W., Fielicke, A., et al. (2016). Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B. International Journal of Mass Spectrometry, 395, 1-6. doi:10.1016/j.ijms.2015.11.006.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0029-6015-2
Abstract
Nano-size clusters are of great interest for understanding of fundamental properties and processes relevant for applied materials science such as heterogeneous catalysis. In this study, we present a newly developed dual-target dual-laser ablation source, suitable for the production of binary clusters and their spectroscopic characterization. With the current design, an almost arbitrary mixing ratio can be achieved by altering different parameters such as the laser fluences. Boron and silicon targets are chosen for cluster production, illustrating the possibility to control the outcome ranging from pure boron over mixed SinBm to pure silicon clusters. As a test system, Si6B clusters are characterized by means of infrared-ultraviolet two-color ionization (IR-UV2CI) spectroscopy, combined with quantum chemical simulations. The most stable structure of Si6B (Cs, 2A′) predicted in our previous work is confirmed by the present experiment. Doping of Si7 with a single B atom has a drastic impact on the geometric, vibrational, and electronic properties.