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Journal Article

Half-Heusler topological insulators

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons126916

Yan,  Binghai
Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Yan, B., & de Visser, A. (2014). Half-Heusler topological insulators. MRS Bulletin, 39(10), 859-866. doi:10.1557/mrs.2014.198.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0024-9841-0
Abstract
Ternary semiconducting or metallic half-Heusler compounds with an atomic composition 1:1:1 are widely studied for their flexible electronic properties and functionalities. Recently, a new material property of half-Heusler compounds was predicted based on electronic structure calculations: the topological insulator. In topological insulators, the metallic surface states are protected from impurity backscattering due to spin-momentum locking. This opens up new perspectives in engineering multifunctional materials. In this article, we introduce half-Heusler materials from the crystallographic and electronic structure point of view. We present an effective model Hamiltonian from which the topological state can be derived, notably from a non-trivial inverted band structure. We discuss general implications of the inverted band structure with a focus on the detection of the topological surface states in experiments by reviewing several exemplary materials. Special attention is given to superconducting half-Heusler materials, which have attracted ample attention as a platform for non-centrosymmetric and topological superconductivity.