Crystal growth and anisotropic resistivity of Bi2Sr2-xLaxCuOy

Wang, N. L.; Buschinger, B.; Geibel, C.; Steglich, F.

doi:10.1103/PhysRevB.54.7449

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Crystal growth and anisotropic resistivity of Bi₂Sr_2-xLa_xCuO_y

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Citation

Wang, N. L., Buschinger, B., Geibel, C., & Steglich, F. (1996). Crystal growth and anisotropic resistivity of Bi₂Sr_2-xLa_xCuO_y. Physical Review B, 54(10), 7449-7454. doi:10.1103/PhysRevB.54.7449.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-E7D9-A

Abstract

A number of Bi2Sr2-xLaxCuOy crystals with different doping levels in the phase diagram have been grown and characterized by x-ray-diffraction measurements. The anisotropic resistivity was measured using a generalization of the Montgomery method and was found to change in a systematic way. Our analysis indicates that for all the samples the in-plane transport is on the metallic side of the Ioffe-Regel criterion, but the out-of-plane transport is deeply on the insulating side of the Mott limit. The temperature dependence of c-axis resistivity rho(c)(T) can be well understood from the incoherent hopping model proposed by Levin and co-workers. The evolution of rho(c)(T) with reduction in doping level is related to the reducing of both the impurity- and boson-assisted hopping processes.