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Journal Article

C-axis resistivities of single- and double-layered Bi-system cuprates: A comparative study

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Citation

Wang, N. L., Geibel, C., & Steglich, F. (1996). C-axis resistivities of single- and double-layered Bi-system cuprates: A comparative study. Journal of Low Temperature Physics, 105(3-4), 951-956. doi:10.1007/BF00768505.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-E7EB-2
Abstract
The measurements of anisotropic resistivities of single- and double-layered Bi-system cuprates at different doping levels are presented. The two types of materials exhibit qualitatively common features in both doping and temperature dependences of their c-axis resistivities, The c-axis conduction is incoherent in nature because the rho(c) data are deeply on the insulating side of the Mott limit, even though positive slopes (d rho(c)/dT>0) are observed below room temperature for overdoped samples. Some differences are revealed by quantifying the trend of rho(c)(T) data, which may reflect differences in the charge excitation spectra.