de.mpg.escidoc.pubman.appbase.FacesBean
Deutsch
 
Hilfe Wegweiser Datenschutzhinweis Impressum Kontakt
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Electrical resistivity of YbRh2Si2 at high pressure

MPG-Autoren
http://pubman.mpdl.mpg.de/cone/persons/resource/persons126584

Dionicio,  G.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons126909

Wilhelm,  H.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons126858

Sparn,  G.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons126603

Ferstl,  J.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons126614

Geibel,  C.
Christoph Geibel, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons126861

Steglich,  F.
Frank Steglich, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

Externe Ressourcen
Es sind keine Externen Ressourcen verfügbar
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Dionicio, G., Wilhelm, H., Sparn, G., Ferstl, J., Geibel, C., & Steglich, F. (2005). Electrical resistivity of YbRh2Si2 at high pressure. Physica B-Condensed Matter, 359-361, 50-52. doi:10.1016/j.physb.2004.12.053.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-0015-2CFB-E
Zusammenfassung
We report on ρ(T)ρ(T) measurements of YbRh2Si2YbRh2Si2 for View the MathML source0.1K<T<300K up to 15 GPa. The (T,p)(T,p) phase diagram can be divided in three pressure ranges: (i) For View the MathML sourcep<4.1GPa the ordering temperature TNTN increases strongly, followed by (ii) a quasi-pressure-independent regime of TNTN in the range View the MathML source4.1GPa<p<8GPa. After a sudden increase of TNTN, the system eventually (iii) exhibits a weak pressure dependence above View the MathML source≈10GPa with View the MathML sourceTN≈7K at 15 GPa. Moreover, the reversible pressure dependencies of several maxima in ρ(T)ρ(T) are analyzed according to these pressure ranges.