Electrical resistivity of YbRh2Si2 at high pressure

Dionicio, G.; Wilhelm, H.; Sparn, G.; Ferstl, J.; Geibel, C.; Steglich, F.

doi:10.1016/j.physb.2004.12.053

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Electrical resistivity of YbRh₂Si₂ at high pressure

MPG-Autoren

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Dionicio, G.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Wilhelm, H.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Sparn, G.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ferstl, J.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Geibel, C.
Christoph Geibel, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Steglich, F.
Frank Steglich, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Zitation

Dionicio, G., Wilhelm, H., Sparn, G., Ferstl, J., Geibel, C., & Steglich, F. (2005). Electrical resistivity of YbRh₂Si₂ at high pressure. Physica B-Condensed Matter, 359-361, 50-52. doi:10.1016/j.physb.2004.12.053.

Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0015-2CFB-E

Zusammenfassung

We report on ρ(T)ρ(T) measurements of YbRh2Si2YbRh2Si2 for View the MathML source0.1K<T<300K up to 15 GPa. The (T,p)(T,p) phase diagram can be divided in three pressure ranges: (i) For View the MathML sourcep<4.1GPa the ordering temperature TNTN increases strongly, followed by (ii) a quasi-pressure-independent regime of TNTN in the range View the MathML source4.1GPa<p<8GPa. After a sudden increase of TNTN, the system eventually (iii) exhibits a weak pressure dependence above View the MathML source≈10GPa with View the MathML sourceTN≈7K at 15 GPa. Moreover, the reversible pressure dependencies of several maxima in ρ(T)ρ(T) are analyzed according to these pressure ranges.