Crystal Structure Refinement and Electronic Properties of Si(cI16)

Wosylus, A.; Rosner, H.; Schnelle, W.; Schwarz, U.

doi:10.1002/zaac.200900051

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Crystal Structure Refinement and Electronic Properties of Si(cI16)

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Wosylus, A.
Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Rosner, H.
Helge Rosner, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Schnelle, W.
Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Schwarz, U.
Ulrich Schwarz, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Wosylus, A., Rosner, H., Schnelle, W., & Schwarz, U. (2009). Crystal Structure Refinement and Electronic Properties of Si(cI16). Zeitschrift für Anorganische und Allgemeine Chemie, 635(4-5), 700-703. doi:10.1002/zaac.200900051.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-25E8-A

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