Strong dependence of the tetragonal Mn2.1Ga thin film crystallization 
temperature window on seed layer

Li, M. Y.; Jiang, X.; Samant, M. G.; Felser, C.; Parkin, S. S. P.

doi:10.1063/1.4815886

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Strong dependence of the tetragonal Mn_2.1Ga thin film crystallization temperature window on seed layer

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Felser, C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Li, M. Y., Jiang, X., Samant, M. G., Felser, C., & Parkin, S. S. P. (2013). Strong dependence of the tetragonal Mn_2.1Ga thin film crystallization temperature window on seed layer. Applied Physics Letters, 103(3): 032410, pp. 032410-1-032410-4. doi:10.1063/1.4815886.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0015-1E92-7

Abstract

For spintronic applications, such as magnetic memory and logic, magnetic thin films with high perpendicular magnetic anisotropy and spin polarization are needed. An attractive candidate material is the Heusler compound Mn3-xGa (x varying from 0 to 2). We show that there is a correlation between the degree of crystallization of thin films of Mn3-xGa (x similar to 0.9) and the magnitude of the perpendicular magnetic anisotropy. Moreover, we find that the crystallization temperature window varies with the seed layer on which the Mn3-xGa films are deposited. Seed layers of Pt, Cr, Ru, Mo and SrTiO3 were considered and the largest crystallization window was found for Pt(100) layers. (C) 2013 AIP Publishing LLC.