de.mpg.escidoc.pubman.appbase.FacesBean
English
 
Help Guide Disclaimer Contact us Login
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Uniaxial strain induced band splitting in semiconducting SrTiO3

MPS-Authors

Chang,  Young Jun
Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory;
Physical Chemistry, Fritz Haber Institute, Max Planck Society;
Department of Physics, University of Seoul;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons71830

Walter,  Andrew L.
Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory;
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons21640

Horn,  Karsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

Locator
There are no locators available
Fulltext (public)

PhysRevB.87.115212.pdf
(Publisher version), 2MB

Supplementary Material (public)
There is no public supplementary material available
Citation

Chang, Y. J., Khalsa, G., Moreschini, L., Walter, A. L., Bostwick, A., Horn, K., et al. (2013). Uniaxial strain induced band splitting in semiconducting SrTiO3. Physical Review B, 87(11): 115212. doi:10.1103/PhysRevB.87.115212.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0014-A2A7-0
Abstract
We use angle-resolved photoemission spectroscopy to study the influence of mechanically induced uniaxial strain on the electronic structure of the oxide semiconductor SrTiO3. We observe an orbital splitting between the Ti 3dyz and 3dxy bands, which are degenerate when unperturbed. Using the k·p method, we qualitatively explain the direction and the size of the observed energy splitting. Our comprehensive understanding of band splitting explains the strain induced mobility enhancement of electron-doped SrTiO33 in terms of band degeneracy breaking and reduced interband scattering. Our approach can be extended to differently strained oxide systems.