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Characterization of Junction Gate Field-Effect Transistors at Room Temperature and 77K

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons104431

Geist,  Jeschua
Division Prof. Dr. Werner Hofmann, MPI for Nuclear Physics, Max Planck Society;

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Geist, J. (2011). Characterization of Junction Gate Field-Effect Transistors at Room Temperature and 77K. Bachelor Thesis, Ruprecht-Karls-Universität, Heidelberg.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0014-6734-A
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