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Structural investigation of nanocrystalline graphene grown on (6√3×6√3) R30°-reconstructed SiC surfaces by molecular beam epitaxy

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons21910

Nemec,  Lydia
Theory, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons21379

Blum,  Volker
Theory, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons22064

Scheffler,  Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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Schumann et al_submitted.pdf
(Any fulltext), 1012KB

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Citation

Schumann, T., Dubslaff, M., Oliveira, M. H., Hanke, M., Fromm, F., Seyller, T., et al. (2013). Structural investigation of nanocrystalline graphene grown on (6√3×6√3) R30°-reconstructed SiC surfaces by molecular beam epitaxy. New Journal of Physics, 15(12): 123034. doi:10.1088/1367-2630/15/12/123034.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0014-9EC2-D
Abstract
Growth of nanocrystalline graphene films on (6√3×6√3) R30°- reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is investigated by Raman spectroscopy, increases with growth time. X-ray photoelectron spectroscopy proves that the SiC surface reconstruction persists throughout the growth process and that the synthesized films consist of sp2-bonded carbon. Interestingly, grazing incidence X-ray diffraction measurements show that the graphene domains possess one single in-plane orientation, are aligned to the substrate, and offer a noticeably contracted lattice parameter of 2.446 Å. We correlate this contraction with theoretically calculated reference values (all-electron density functional calculations based on the van der Waals corrected PBE functional) for the lattice parameter contraction induced in ideal, free-standing graphene sheets by: substrate-induced buckling, the edges of limited-size flakes, and typical point defects (monovacancies, divacancies, Stone-Wales defects).