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Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons101578

Gholamrezaie,  Fatemeh
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons85231

de Leeuw,  Dago M.
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Citation

Sizov, A. S., Agina, E. V., Gholamrezaie, F., Bruevich, V. V., Borshchev, O. V., Paraschuk, D. Y., et al. (2013). Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique. Applied Physics Letters, 103(4): 043310. doi:10.1063/1.4816839.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0014-4AEF-5
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